vishay siliconix sia433edj new product document number: 65472 s09-2114-rev. a, 12-oct-09 www.vishay.com 1 p-channel 20-v (d-s) mosfet product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) - 20 0.018 at v gs = - 4.5 v - 12 a 20 nc 0.026 at v gs = - 2.5 v - 12 a 0.065 at v gs = - 1.8 v - 4 orderin g information: SIA433EDJ-T1-GE3 (lead (p b )-free and halogen-free) markin g code x x x b l x lot tracea b ility a n d d a t e code part # code p-channel mosfet s d r g powerpak sc-70-6l-sin g le 6 5 4 1 2 3 d d d d g s s 2.05 mm 2.05 mm notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak sc-70 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the si ngulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. f. maximum under steady state conditions is 80 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) t c = 25 c i d - 12 a a t c = 70 c - 12 a t a = 25 c - 11.3 b, c t a = 70 c - 9.1 b, c pulsed drain current i dm - 50 continuous source-drain diode current t c = 25 c i s - 12 a t a = 25 c - 2.9 b, c maximum power dissipation t c = 25 c p d 19 w t c = 70 c 12 t a = 25 c 3.5 b, c t a = 70 c 2.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t 5 s r thja 28 36 c/w maximum junction-to-case (drain) steady state r thjc 5.3 6.5 features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? new thermally enhanced powerpak ? sc-70 package - small footprint area - low on-resistance ? 100 % r g tested ? built in esd protection with zener diode ? typical esd performance: 1800 v ? compliant to rohs directive 2002/95/ec applications ? portable devices - load switch - battery switch - charger switch
www.vishay.com 2 document number: 65472 s09-2114-rev. a, 12-oct-09 vishay siliconix sia433edj new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient v ds /t j i d = - 250 a - 12 mv/c v gs(th) temperature coefficient v gs(th) /t j 3 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.5 - 1.2 v gate-source leakage i gss v ds = 0 v, v gs = 12 v 20 a v ds = 0 v, v gs = 4.5 v 0.5 zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 20 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 7.6 a 0.015 0.018 v gs = - 2.5 v, i d = - 6.3 a 0.021 0.026 v gs = - 1.8 v, i d = - 2.5 a 0.040 0.065 forward transconductance a g fs v ds = - 10 v, i d = - 7.6 a 35 s dynamic b total gate charge q g v ds = - 10 v, v gs = - 8 v, i d = - 11 a 50 75 nc gate-source charge v ds = - 10 v, v gs = - 4.5 v, i d = - 11 a 20 30 q gs 3.3 gate-drain charge q gd 8.4 gate resistance r g f = 1 mhz 0.2 1 2 k tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 1 i d ? - 9 a, v gen = - 4.5 v, r g = 1 0.71 1.1 us rise time t r 1.7 2.6 turn-off delay time t d(off) 69 fall time t f 3.2 5 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 1 i d ? - 9 a, v gen = - 10 v, r g = 1 0.3 0.45 rise time t r 0.6 0.9 turn-off delay time t d(off) 10 15 fall time t f 3.5 5.5 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 12 a pulse diode forward current i sm - 50 body diode voltage v sd i s = - 9 a, v gs = 0 v - 0.85 - 1.2 v body diode reverse recovery time t rr i f = 9 a, di/dt = 100 a/s, t j = 25 c 30 60 ns body diode reverse recovery charge q rr 20 40 nc reverse recovery fall time t a 13 ns reverse recovery rise time t b 17
document number: 65472 s09-2114-rev. a, 12-oct-09 www.vishay.com 3 vishay siliconix sia433edj new product typical characteristics 25 c, unless otherwise noted gate current vs. gate-source voltage output characteristics on-resistance vs. drain current - gate c u rrent (ma) i gss v gs - gate-to-so u rce v oltage ( v ) t j =25 c 0.0 0.2 0.4 0.6 0. 8 1.0 03691215 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5 v thr u 3 v v gs =2 v v gs =2.5 v v gs =1.5 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.0 8 0 1020304050 v gs =1. 8v v gs =4.5 v v gs =2.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) gate current vs. gate-source voltage transfer characteristics gate charge - gate c u rrent (a) i gss v gs - gate-to-so u rce v oltage ( v ) 0 3 6 9 12 15 10 -9 10 - 8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 t j = 25 c t j = 150 c 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 t c = 25 c t c = 125 c t c =- 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 2 4 6 8 10 0 1020304050 v ds =16 v v ds =10 v i d =11a v ds =5 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs
www.vishay.com 4 document number: 65472 s09-2114-rev. a, 12-oct-09 vishay siliconix sia433edj new product typical characteristics 25 c, unless otherwise noted on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs =2.5 v i d =7.6a v gs =4.5 v t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 012345 i d = 2.5 a; t j = 125 c i d = 7.6 a; t j = 25 c i d =7.6a;t j = 125 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) i d = 2.5 a; t j = 25 c po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 0 5 10 15 20 25 30 soure-drain diode forward voltage threshold voltage safe operating area, junction-to-ambient 0.1 1 10 100 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 25 c t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 ms limited b yr ds(on) * b v dss limited 1ms 100 s 10 ms 1s,10s dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d
document number: 65472 s09-2114-rev. a, 12-oct-09 www.vishay.com 5 vishay siliconix sia433edj new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 5 10 15 20 25 30 0 255075100125150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) power derating 0 5 10 15 20 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
www.vishay.com 6 document number: 65472 s09-2114-rev. a, 12-oct-09 vishay siliconix sia433edj new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65472 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 0.02 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 8 0 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -4 1 0.1 0.2 0.1 d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.02 single p u lse 0.05 10 -1
vishay siliconix package information document number: 73001 06-aug-07 www.vishay.com 1 powerpak ? sc70-6l dim single pad dual pad millimeters inches millimeters inches min nom max min nom max min nom max min nom max a 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 a1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 c 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 d 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 d1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 d2 0.135 0.235 0.335 0.005 0.009 0.013 e 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 e1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 e2 0.345 0.395 0.445 0.014 0.016 0.018 e3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 bsc 0.026 bsc 0.65 bsc 0.026 bsc k 0.275 typ 0.011 typ 0.275 typ 0.011 typ k1 0.400 typ 0.016 typ 0.320 typ 0.013 typ k2 0.240 typ 0.009 typ 0.252 typ 0.010 typ k3 0.225 typ 0.009 typ k4 0.355 typ 0.014 typ l 0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 t 0.05 0.10 0.15 0.002 0.004 0.006 ecn: c-07431 ? rev. c, 06-aug-07 dwg: 5934 e2 back s ide view of s ingle back s ide view of dual note s : 1. all dimen s ion s a re in millimeter s 2. p a ck a ge o u tline excl us ive of mold fl as h a nd met a l bu rr 3 . p a ck a ge o u tline incl us ive of pl a ting pin1 pin6 pin5 pin4 pin2 pin 3 a z detail z z d e k1 k2 c a1 k 3 k2 k2 e b b e pin6 pin5 pin4 pin1 pin 3 pin2 e1 e1 e1 l l k4 k k k d1 d2 d1 d1 k1 e 3
application note 826 vishay siliconix document number: 70486 www.vishay.com revision: 21-jan-08 11 application note recommended pad layout for powerpak ? sc70-6l single 1 0.300 (0.012) 0.350 (0.014) 2.200 (0.087) 1.500 (0.059) 0.650 (0.026) 0.950 (0.037) 0.300 (0.012) 0.355 (0.014) 0.235 (0.009) 0.475 (0.019) 0.870 (0.034) 0.275 (0.011) 0.350 (0.014) 0.550 (0.022) 0.650 (0.026) dimensions in mm/(inches) return to index
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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